The current production program is based on gallium arsenide (GaAs) substrates and includes only PIN diodes for soft- and hard-switching applications in a voltage range from 400V to 1,700V and currents of up to 100A per chip. As GaAs is a semiconductor with a direct band gap larger than that of silicon, we call our devices direct wide bandgap (dWBG) diodes. At present, 3-5 PE is the only enterprise that uses GaAs also for power semiconductors. This substrate have so far only been used for high-frequency applications with very low voltages.
