Our Vision

Our vision is to supplement the new power semiconductors silicon carbide (SiC) and gallium nitride (GaN), which have so far been available on the market, by a GaAs semiconductor material. This material has been used for decades in the low-voltage range and has comparable or, in certain applications, even better properties than the two materials SiC and GaN.

Our GaAs power semiconductors can be manufactured substantially more cost effective. They also significantly reduce electrical losses, form factor as well as the costs of the corresponding power transformation systems.